| Symbol | Parameters | Test Conditions | Junction Temp | Min | Typical | Max | Unit |
| IT(AV) | Average On-State Current | 180° half sine wave, 50Hz, double-sided heat dissipation, TC=55℃ | 125℃ | — | — | 110 | A |
| IT(RMS) | RMS On-State Current | — | — | — | 173 | A |
| VDRM | Off-State Repetitive Peak Voltage | VDRM & VRRM, tp=10ms | 500 | — | 2500 | V |
| VRRM | Reverse Repetitive Peak Voltage | VDSM&VRSM=VDRM&VRRM−100 | — | 2500 | V |
| IDRM | Off-State Repetitive Peak Current | VDM=VDRM | — | — | 20 | mA |
| IRRM | Reverse Repetitive Peak Current | VRM=VRRM | — | — | 20 | mA |
| ITSM | Non-Repetitive On-State Surge Current | 10ms base width, sine half wave | — | — | 2.4 | kA |
| I2t | Squared Current-Time Product (Inrush) | VR=0.6VRRM | — | — | 29×103 | A2⋅s |
| VTO | Threshold Voltage | — | — | — | 0.8 | V |
| rT | Slope Resistance | — | — | — | 2.29 | mΩ |
| VTM | On-State Peak Voltage | ITM=330A | — | — | 1.15 | V |
| dv/dt | Critical Off-State Voltage Rise Rate | VDM=0.67VDRM | — | — | 800 | V/μs |
| di/dt | Critical On-State Current Rise Rate | IMT=52A, Gate trigger current amplitude IGR=1.5A, Gate current rise time tr≤0.5μs | — | — | 100 | A/μs |
| IGT | Gate Trigger Current | — | 30 | — | 100 | mA |
| VGT | Gate Trigger Voltage | VA=12V,IA=1A | 1 | — | 2.5 | V |
| IH | Holding Current | — | 20 | — | 150 | mA |
| VGD | Gate Non-Trigger Voltage | VDM=0.67VDRM | — | — | 0.2 | V |
| Rth(j−c) | Thermal Impedance (Junction to Case) | 180° sine wave, single-sided heat dissipation | — | — | — | 0.25 | ℃/W |
| Rth(c−h) | Thermal Impedance (Case to Heatsink) | 180° sine wave, single-sided heat dissipation | — | — | — | 0.15 | ℃/W |
| Viso | Isolation Voltage | — | — | 2500 | — | — | V |
| FM | Mounting Torque (M5 screw) | — | — | 4 | — | — | N·m |
| FM | Mounting Torque (M6 screw) | — | — | 6 | — | — | N·m |
| Tstq | Storage Temperature | — | — | -40 | — | 125 | ℃ |
| Wt | Weight | — | — | — | — | — | g |
| Outline | Package Shape | — | — | — | — | — | — |
